검색결과 : 18건
No. | Article |
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1 |
Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC Madito MJ, Hlatshwayo TT, Skuratov VA, Mtshali CB, Manyala N, Khumalo ZM Applied Surface Science, 493, 1291, 2019 |
2 |
Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum Kim SB, Lee SH, Jung HJ, Seo MS, Kim SM, Lee S, Park JY, Park TJ, Jeong HY, Jun DH, Park KH, Park WK, Lee SW Thin Solid Films, 646, 173, 2018 |
3 |
Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy Tawil SNM, Krishnamurthy D, Kakimi R, Emura S, Hasegawa S, Asahi H Journal of Crystal Growth, 323(1), 351, 2011 |
4 |
Enhanced control over selective-area intermixing of In0.15Ga0.85As/GaAs quantum dots through post-growth exposure to radio-frequency plasma Bickel N, LikamWa P Thin Solid Films, 519(6), 1955, 2011 |
5 |
Microstructural Analysis of Epitaxial Layer Defects in Si Wafer Lim SH Korean Journal of Materials Research, 20(12), 645, 2010 |
6 |
Deposition, characterization and biological application of epitaxial Li:ZnO/Al:ZnO double-layers Vlad A, Yakunin S, Kolmhofer E, Kolotovska V, Muresan L, Sonnleitner A, Bauerle D, Pedarnig JD Thin Solid Films, 518(4), 1350, 2009 |
7 |
Growth of magnetic materials and structures on Si(001) substrates using Co2Si as a template layer Mendez SO, Le Thanh V, Ranguis A, Derrien J Applied Surface Science, 254(19), 6040, 2008 |
8 |
Synthesis of ZnO nanorods on GaN epitaxial layer and Si (100) substrate using a simple hydrothermal process Jang JM, Kim JY, Jung WG Thin Solid Films, 516(23), 8524, 2008 |
9 |
Structural and optical characterization of GaN heteroepitaxial films on SiC substrates Morse M, Wu P, Choi S, Kim TH, Brown AS, Losurdo M, Bruno G Applied Surface Science, 253(1), 232, 2006 |
10 |
Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates Blanc C, Zielinski M, Souliere V, Sartel C, Juillaguet S, Contreras S, Camassel J, Monteil Y Materials Science Forum, 483, 117, 2005 |