화학공학소재연구정보센터
검색결과 : 167건
No. Article
1 Enhanced tunability of two-dimensional electron gas on SrTiO3 through heterostructuring
Yoo HK, Moreschini L, Bostwick A, Walter AL, Noh TW, Rotenberg E, Chang YJ
Current Applied Physics, 20(11), 1268, 2020
2 Electronic structure, magnetoexcitons and valley polarized electron gas in 2D crystals
Szulakowska L, Bieniek M, Hawrylak P
Solid-State Electronics, 155, 105, 2019
3 Observation of a two-dimensional electron gas at CaTiO3 film surfaces
Muff S, Fanciulli M, Weber AP, Pilet N, Ristic Z, Wang ZM, Plumb NC, Radovic M, Dil JH
Applied Surface Science, 432, 41, 2018
4 Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition
Zhang YC, Wang ZZ, Xu SR, Bao WM, Zhang T, Huang J, Zhang JC, Hao Y
Materials Research Bulletin, 105, 368, 2018
5 Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors
Zheng X, Feng SW, Zhang YM, Jia YP
Solid-State Electronics, 147, 35, 2018
6 Evolution of the SrTiO3 surface electronic state as a function of LaAlO3 overlayer thickness
Plumb NC, Kobayashi M, Salluzzo M, Razzoli E, Matt CE, Strocov VN, Zhou KJ, Shi M, Mesot J, Schmitt T, Patthey L, Radovic M
Applied Surface Science, 412, 271, 2017
7 Is gamma-Al2O3 polar?
Christensen DV, Smith A
Applied Surface Science, 423, 887, 2017
8 Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on-200 mm Si
Kumar S, Remesh N, Dolmanan SB, Tripathy S, Raghavan S, Muralidharan R, Nath DN
Solid-State Electronics, 137, 117, 2017
9 Gate leakage currents induced by thermal fluctuation on two-dimensional electron gas in AlGaN/GaN high-electron-mobility transistors
Peng J, Liu XW, Ji D, Lu YW
Thin Solid Films, 623, 98, 2017
10 Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility > 35 x 10(6) cm(2)/V s in AlGaAs/GaAs quantum wells grown by MBE
Gardner GC, Fallahi S, Watson JD, Manfra MJ
Journal of Crystal Growth, 441, 71, 2016