| 1 |
Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD
Nosaka T, Sakuraba M, Tillack B, Murota J
Thin Solid Films, 518, S140, 2010 |
| 2 |
Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating
Sugawara K, Sakuraba M, Murota J
Thin Solid Films, 518, S57, 2010 |
| 3 |
Silicon nitride thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition for micromechanical system applications
Biasotto C, Diniz JA, Daltrini AM, Moshkalev SA, Monteiro MJR
Thin Solid Films, 516(21), 7777, 2008 |
| 4 |
Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD
Sakuraba M, Muto D, Mori M, Sugawara K, Murota J
Thin Solid Films, 517(1), 10, 2008 |
| 5 |
Preparation of positive LiCoO2 films by electron cyclotron resonance (ECR) plasma sputtering method and its application to all-solid-state thin-film lithium batteries
Hayashi M, Takahashi M, Sakurai Y
Journal of Power Sources, 174(2), 990, 2007 |
| 6 |
Thermal effect on strain relaxation in Ge films epitaxially grown on Si(100) using ECR plasma CVD
Sugawara K, Sakuraba M, Murota J
Thin Solid Films, 508(1-2), 143, 2006 |
| 7 |
Silicon nitride deposited by ECR-CVD at room temperature for LOCOS isolation technology
Pereira MA, Diniz JA, Doi I, Swart JW
Applied Surface Science, 212, 388, 2003 |
| 8 |
Growth of GaN films on nitrided GaAs substrates using hot-wire CVD
Yasui K, Morimoto K, Akahane T
Thin Solid Films, 430(1-2), 174, 2003 |
| 9 |
Comparison of the removal efficiency for organic contaminants on silicon wafers stored in plastic boxes between UV/O-3 and ECR oxygen plasma cleaning methods
Choi K, Eom TJ, Lee C
Thin Solid Films, 435(1-2), 227, 2003 |
| 10 |
Chamber wall cleaning in a reactive ECR plasma
Horiuchi K, Nishina A, Iizuka S, Sato N
Thin Solid Films, 316(1-2), 148, 1998 |
