화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures
Tsuruoka T, Valov I, Tappertzhofen S, van den Hurk J, Hasegawa T, Waser R, Aono M
Advanced Functional Materials, 25(40), 6374, 2015
2 Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices
Lubben M, Karakolis P, Ioannou-Sougleridis V, Normand P, Dimitrakis P, Valov I
Advanced Materials, 27(40), 6202, 2015
3 Graphene-Coated Atomic Force Microscope Tips for Reliable Nanoscale Electrical Characterization
Lanza M, Bayerl A, Gao T, Porti M, Nafria M, Jing GY, Zhang YF, Liu ZF, Duan HL
Advanced Materials, 25(10), 1440, 2013
4 Preparation and characterization of GeSx thin-films for resistive switching memories
van den Hurk J, Valov I, Waser R
Thin Solid Films, 527, 299, 2013
5 Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory
Cho DY, Valov I, van den Hurk J, Tappertzhofen S, Waser R
Advanced Materials, 24(33), 4552, 2012
6 Measurement of residual stresses in electrochemically metallized coatings on thin cross-cut ring substrate
Lille H, Koo J, Ryabchikov A, Pihl T
Materials Science Forum, 524-525, 873, 2006