화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 InGaAs self-assembly quantum dot for high-speed 1300 nm electroabsorption modulator
Lin CH, Wu JP, Kuo YZ, Chiu YJ, Tzeng TE, Lay TS
Journal of Crystal Growth, 323(1), 473, 2011
2 Design of a novel periodic asymmetric intra-step-barrier coupled double strained quantum well electroabsorption modulator at 1.55 mu m
Abedi K, Ahmadi V, Darabi E, Farshi MKM, Sheikhi MH
Solid-State Electronics, 52(2), 312, 2008
3 Electroabsorption modulator performance predicted from band-edge absorption spectra of bulk, quantum-well, and quantum-well-intermixed InGaAsP structures
Morrison GB, Raring JW, Wang CS, Skogen EJ, Chang YC, Sysak M, Coldren LA
Solid-State Electronics, 51(1), 38, 2007
4 Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters
Hou LP, Zhu HL, Zhou F, Wang BJ, Bian J, Wang W
Journal of Crystal Growth, 288(1), 148, 2006