검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
Evaluation of ion mobility in capillary electrophoresis coupled to mass spectrometry for the identification in metabolomics Drouin N, Mielcarek A, Wenz C, Rudaz S Electrophoresis, 42(4), 342, 2021 |
| 2 |
Modeling of a DBD plasma reactor for porous soil remediation Bali N, Aggelopoulos CA, Skouras ED, Tsakiroglou CD, Burganos VN Chemical Engineering Journal, 373, 393, 2019 |
| 3 |
All regimes mobility extraction using split C-V technique enhanced with charge-sheet model Hubert Q, Carmona M, Rebuffat B, Innocenti J, Masson P, Masoero L, Julien F, Lopez L, Chiquet P Solid-State Electronics, 111, 52, 2015 |
| 4 |
Effects of channel width variation on electrical characteristics of tri-gate Junction less transistors Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G Solid-State Electronics, 81, 58, 2013 |
| 5 |
A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration Diab A, Fernandez C, Ohata A, Rodriguez N, Ionica I, Bae Y, Van den Daele W, Allibert F, Gamiz F, Ghibaudo G, Mazure C, Cristoloveanu S Solid-State Electronics, 90, 127, 2013 |
| 6 |
A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS Ong SN, Yeo KS, Chew KWJ, Chan LHK, Loo XS, Boon CC, Do MA Solid-State Electronics, 68, 32, 2012 |
| 7 |
Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process Kawanago T, Suzuki T, Lee Y, Kakushima K, Ahmet P, Tsutsui K, Nishiyama A, Sugii N, Natori K, Hattori T, Iwai H Solid-State Electronics, 68, 68, 2012 |
| 8 |
Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs Kawanago T, Lee Y, Kakushima K, Ahmet P, Tsutsui K, Nishiyama A, Sugii N, Natori K, Hattori T, Iwai H Solid-State Electronics, 74, 2, 2012 |
| 9 |
Mobility analysis of surface roughness scattering in FinFET devices Lee JW, Jang D, Mouis M, Kim GT, Chiarella T, Hoffmann T, Ghibaudo G Solid-State Electronics, 62(1), 195, 2011 |
| 10 |
Interface and electrical properties of La-silicate for direct contact of high-k with silicon Kakushima K, Tachi K, Adachi M, Okamoto K, Sato S, Song J, Kawanago T, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H Solid-State Electronics, 54(7), 715, 2010 |