검색결과 : 33건
No. | Article |
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1 |
Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation Balaguer M, Roldan JB, Donetti L, Gamiz F Solid-State Electronics, 67(1), 30, 2012 |
2 |
Symmetrical unified compact model of short-channel double-gate MOSFETs Papathanasiou K, Theodorou CG, Tsormpatzoglou A, Tassis DH, Dimitriadis CA, Bucher M, Ghibaudo G Solid-State Electronics, 69, 55, 2012 |
3 |
A formula for the central potential's maximum magnitude in arbitrarily doped symmetric double-gate MOSFETs Garcia-Sanchez FJ, Ortiz-Conde A Solid-State Electronics, 76, 112, 2012 |
4 |
A surface potential based drain current model for asymmetric double gate MOSFETs Dutta P, Syamal B, Mohankumar N, Sarkar CK Solid-State Electronics, 56(1), 148, 2011 |
5 |
Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET Ortiz-Conde A, Garcia-Sanchez FJ Solid-State Electronics, 57(1), 43, 2011 |
6 |
A computationally efficient compact model for fully-depleted SOI MOSFETs with independently-controlled front- and back-gates Lu DD, Dunga MV, Lin CH, Niknejad AM, Hu CM Solid-State Electronics, 62(1), 31, 2011 |
7 |
SOI versus bulk-silicon nanoscale FinFETs Fossum JG, Zhou ZM, Mathew L, Nguyen BY Solid-State Electronics, 54(2), 86, 2010 |
8 |
Solution space for the independent-gate asymmetric DGFET Dessai G, Gildenblat G Solid-State Electronics, 54(4), 382, 2010 |
9 |
Comparison and improvement of two core compact models for double-gate MOSFETs Zhou XY, Zhou ZZ, Zhang JA, Zhang LN, Ma CY, He J, Zhang X Solid-State Electronics, 54(11), 1444, 2010 |
10 |
Continuous model for independent double gate MOSFET Reyboz M, Martin P, Poiroux T, Rozeau O Solid-State Electronics, 53(5), 504, 2009 |