화학공학소재연구정보센터
검색결과 : 33건
No. Article
1 Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation
Balaguer M, Roldan JB, Donetti L, Gamiz F
Solid-State Electronics, 67(1), 30, 2012
2 Symmetrical unified compact model of short-channel double-gate MOSFETs
Papathanasiou K, Theodorou CG, Tsormpatzoglou A, Tassis DH, Dimitriadis CA, Bucher M, Ghibaudo G
Solid-State Electronics, 69, 55, 2012
3 A formula for the central potential's maximum magnitude in arbitrarily doped symmetric double-gate MOSFETs
Garcia-Sanchez FJ, Ortiz-Conde A
Solid-State Electronics, 76, 112, 2012
4 A surface potential based drain current model for asymmetric double gate MOSFETs
Dutta P, Syamal B, Mohankumar N, Sarkar CK
Solid-State Electronics, 56(1), 148, 2011
5 Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET
Ortiz-Conde A, Garcia-Sanchez FJ
Solid-State Electronics, 57(1), 43, 2011
6 A computationally efficient compact model for fully-depleted SOI MOSFETs with independently-controlled front- and back-gates
Lu DD, Dunga MV, Lin CH, Niknejad AM, Hu CM
Solid-State Electronics, 62(1), 31, 2011
7 SOI versus bulk-silicon nanoscale FinFETs
Fossum JG, Zhou ZM, Mathew L, Nguyen BY
Solid-State Electronics, 54(2), 86, 2010
8 Solution space for the independent-gate asymmetric DGFET
Dessai G, Gildenblat G
Solid-State Electronics, 54(4), 382, 2010
9 Comparison and improvement of two core compact models for double-gate MOSFETs
Zhou XY, Zhou ZZ, Zhang JA, Zhang LN, Ma CY, He J, Zhang X
Solid-State Electronics, 54(11), 1444, 2010
10 Continuous model for independent double gate MOSFET
Reyboz M, Martin P, Poiroux T, Rozeau O
Solid-State Electronics, 53(5), 504, 2009