검색결과 : 9건
No. | Article |
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1 |
Improved quality of InGaN/GaN multiple quantum wells by a strain releif layer Niu NH, Wang HB, Liu JP, Liu NX, Xing YH, Han J, Deng J, Shen GD Journal of Crystal Growth, 286(2), 209, 2006 |
2 |
X-ray diffraction imaging of GaN-based heterostructures on SiC Poust B, Feichtinger P, Sandhu R, Smorchkova I, Heying B, Block T, Wojtowicz M, Goorsky M Materials Science Forum, 457-460, 1601, 2004 |
3 |
Determination of residual stress in thin films: a comparative study of X-ray topography versus laser curvature method Zhao ZB, Hershberger J, Yalisove SM, Bilello JC Thin Solid Films, 415(1-2), 21, 2002 |
4 |
Evaluation of crystal quality of ZnTe/GaAs epilayers by the double crystal rocking curve Nam S, Yu YM, Rhee J, O B, Choi YD, Lee J, Jung YJ Materials Chemistry and Physics, 69(1-3), 30, 2001 |
5 |
Growth temperature dependence of substitutional carbon incorporation in Si1-yCy alloys and Si1-yCy/Si multiple quantum wells Jeong MS, Ihm SH, Seok JH, Cha OH, Kim JY, Suh EK, Lee HJ Journal of Crystal Growth, 209(4), 789, 2000 |
6 |
Quality assessment of Bridgman-grown CdTe single crystals using double-crystal X-ray diffractometry (DCD) and synchrotron radiation Kumaresan R, Gopalakrishnan R, Babu SM, Ramasamy P, Zaumseil P, Ichimura M Journal of Crystal Growth, 210(1-3), 193, 2000 |
7 |
GaAs substrate thermal preheating effect exerted on ZnTe epilayer Nam S, Yu YM, Rhee J, O B, Lee KS, Choi YD, Lee JW, Sakakibara S Journal of Crystal Growth, 212(3-4), 416, 2000 |
8 |
Growth of stress-reduced GaAs on Si substrate by using epitaxial lift-off and MOCVD regrowth Soga T, Arokiaraj J, Taguchi H, Jimbo T, Umeno M Journal of Crystal Growth, 221, 220, 2000 |
9 |
NEXAFS Spectroscopic Study of Organic Photographic Dyes and Their Adsorbed States on AgCl and AgBr Araki T, Ito E, Oichi K, Mitsumoto R, Sei M, Oji H, Yamamoto Y, Ouchi Y, Seki K, Takata Y, Edamatsu K, Yokoyama T, Ohta T, Kitajima Y, Watanabe S, Yamashita K, Tani T Journal of Physical Chemistry B, 101(49), 10378, 1997 |