검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Real-time measurement of Cp2Mg vapor concentration using the non dispersive infrared spectroscopy Hayashi D, Teraoka A, Sakaguchi Y, Minami M, Nishizato H Journal of Crystal Growth, 453, 54, 2016 |
| 2 |
Investigation on crystalline structure, boron distribution, and residual stresses in freestanding boron-doped CVD diamond films Li HD, Zhang T, Li LA, Lu XY, Li B, Jin ZS, Zou GT Journal of Crystal Growth, 312(12-13), 1986, 2010 |
| 3 |
Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD Pedersen H, Beyer FC, Hassan J, Henry A, Janzen E Journal of Crystal Growth, 311(5), 1321, 2009 |
| 4 |
Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD Pedersen H, Beyer FC, Henry A, Janzen E Journal of Crystal Growth, 311(13), 3364, 2009 |
| 5 |
Growth and characterization of boron-doped (111) CVD homoepitaxial diamond films Ri SG, Kato H, Ogura M, Watanabe H, Makino T, Yamasaki S, Okushi H Journal of Crystal Growth, 299(2), 235, 2007 |
| 6 |
Effects of vicinal angles from (001) surface on the Boron-doping features of high-quality homoepitaxial diamond films grown by the high-power microwave plasma chemical-vapor-deposition method Arima K, Miyatake H, Teraji T, Ito T Journal of Crystal Growth, 309(2), 145, 2007 |
| 7 |
Impurity effects in ZnO and nitrogen-doped ZnO thin films fabricated by MOCVD Li XN, Asher SE, Limpijumnong S, Keyes BM, Perkins CL, Barnes TM, Moutinho HR, Luther JM, Zhang SB, Wei SH, Coutts TJ Journal of Crystal Growth, 287(1), 94, 2006 |
| 8 |
Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers Chen WZ, Lee KY, Capano MA Journal of Crystal Growth, 297(2), 265, 2006 |
| 9 |
A study of Si/SiGe selective epitaxial growth by experimental design approach Tan BL, Tan TL Thin Solid Films, 504(1-2), 95, 2006 |
| 10 |
Uniformity of 4H-SiC epitaxial layers grown on 3-in diameter substrates Nishio J, Hasegawa M, Kojima K, Ohno T, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Arai K Journal of Crystal Growth, 258(1-2), 113, 2003 |