| 1 |
Helium and hydrogen interaction in tungsten simultaneously irradiated by He+-H-2(+) at high temperature
Zhou QL, Togari A, Nakata M, Zhao MZ, Sun F, Yajima M, Tokitani M, Masuzaki S, Yoshida N, Hara M, Hatano Y, Oya Y
International Journal of Hydrogen Energy, 45(16), 9959, 2020 |
| 2 |
Atomic configurations of basal stacking faults and dislocation loops in GaN irradiated with Xe-20(+) ions at room temperature
Li BS, Liu HP, Lu XR, Kang L, Sheng YB, Xiong AL
Applied Surface Science, 486, 15, 2019 |
| 3 |
Impact of irradiation induced dislocation loops on thermal conductivity in ceramics
Khafizov M, Pakarinen J, He LF, Hurley DH
Journal of the American Ceramic Society, 102(12), 7533, 2019 |
| 4 |
Effects of intermediate energy heavy-ion irradiation on the microstructure of rutile TiO2 single crystal
Smith KA, Savva AI, Wu YQ, Tenne DA, Butt DP, Xiong H, Wharry JP
Journal of the American Ceramic Society, 101(9), 4357, 2018 |
| 5 |
Molecular dynamics simulation of plasticity in VN(001) crystals under nanoindentation with a spherical indenter
Fu T, Peng XH, Wang C, Lin ZJ, Chen XS, Hu N, Wang ZC
Applied Surface Science, 392, 942, 2017 |
| 6 |
Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt
Abe T, Takahashi T, Shirai K, Zhang XW
Journal of Crystal Growth, 434, 128, 2016 |
| 7 |
Observations of secondary defects and vacancies in CZ silicon crystals detached from melt using four different types of characterization technique
Abe T, Takahashi T, Shirai K
Journal of Crystal Growth, 436, 23, 2016 |
| 8 |
Study of surface blistering in GaN by hydrogen implantation at elevated temperatures
Li BS, Wang ZG, Zhang HP
Thin Solid Films, 590, 64, 2015 |
| 9 |
Three-dimensional molecular dynamics simulation of nanostructure for reciprocating nanomachining process
Liang YC, Chen JX, Chen MJ, Song DP, Bai QS
Journal of Vacuum Science & Technology B, 27(3), 1536, 2009 |
| 10 |
Influence of implantation temperature and dose rate on secondary defect formation in 4H-SiC
Ohno T, Amemiya K
Materials Science Forum, 389-3, 823, 2002 |
