검색결과 : 50건
| No. | Article |
|---|---|
| 1 |
Tunnel junction limited performance of InGaAsN/GaAs tandem solar cell Dawidowski W, Sciana B, Zborowska-Lindert I, Mikolasek M, Kovac J, Tlaczala M Solar Energy, 214, 632, 2021 |
| 2 |
Photovoltaic properties of low-bandgap (0.7-0.9 eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs Isoaho R, Aho A, Tukiainen A, Aho T, Raappana M, Salminen T, Reuna J, Guina M Solar Energy Materials and Solar Cells, 195, 198, 2019 |
| 3 |
Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques Lopez-Escalante MC, Sciana B, Dawidowski W, Bielak K, Gabas M Applied Surface Science, 433, 1, 2018 |
| 4 |
Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy Donchev V, Milanova M, Asenova I, Shtinkov N, Alonso-Alvarez D, Mellor A, Karmakov Y, Georgiev S, Ekins-Daukes N Journal of Crystal Growth, 483, 140, 2018 |
| 5 |
Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (001) substrates Ludewig P, Diederich M, Jandieri K, Stolz W Journal of Crystal Growth, 467, 61, 2017 |
| 6 |
Determination of composition of non-homogeneous GaInNAs layers Pucicki D, Bielak K, Sciana B, Radziewicz D, Latkowska-Baranowska M, Kovac J, Vincze A, Tlaczala M Journal of Crystal Growth, 433, 105, 2016 |
| 7 |
MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates Ludewig P, Reinhard S, Jandieri K, Wegele T, Beyer A, Tapfer L, Volz K, Stolz W Journal of Crystal Growth, 438, 63, 2016 |
| 8 |
Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells Polojarvi V, Aho A, Tukiainen A, Raappana M, Aho T, Schramm A, Guina M Solar Energy Materials and Solar Cells, 149, 213, 2016 |
| 9 |
The influence of top electrode of InGaAsN/GaAs solar cell on their electrical parameters extracted from illuminated I-V characteristics Dawidowski W, Sciana B, Zborowska-Lindert I, Mikolasek M, Bielak K, Badura M, Pucicki D, Radziewicz D, Kovac J, Tlaczala M Solid-State Electronics, 120, 13, 2016 |
| 10 |
InSb1 (-) N-x(x) alloys on GaSb substrate by metal-organic chemical vapor deposition for long wavelength detection Jin YJ, Tang XH, Ke C, Zhang DH Thin Solid Films, 616, 624, 2016 |