| 1 |
Investigation of the temperature dependence of random telegraph noise fluctuations in nanoscale polysilicon-channel 3-D Flash cells
Nicosia G, Goda A, Spinelli AS, Compagnoni CM
Solid-State Electronics, 151, 18, 2019 |
| 2 |
Spinning reserve quantification by a stochastic-probabilistic scheme for smart power systems with high wind penetration
Khazali A, Kalantar M
Energy Conversion and Management, 96, 242, 2015 |
| 3 |
Using Improved Power Electronics Modeling and Turbine Control to Improve Wind Turbine Reliability
Lei T, Barnes M, Smith S, Hur SH, Stock A, Leithead WE
IEEE Transactions on Energy Conversion, 30(3), 1043, 2015 |
| 4 |
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories
Paolucci GM, Bertuccio M, Compagnoni CM, Beltrami S, Spinelli AS, Lacaita AL, Visconti A
Solid-State Electronics, 113, 138, 2015 |
| 5 |
Hot-electron induced defect generation in AlGaN/GaN high electron mobility transistors
Rao H, Bosman G
Solid-State Electronics, 79, 11, 2013 |
| 6 |
Effect of CF4 Plasma on Properties and Reliability of Metal-Induced Lateral Crystallization Silicon Transistors
Chang CP, Wu YS
Journal of the Electrochemical Society, 157(2), H192, 2010 |
| 7 |
Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors
Chen TP, Lee CJ, Cheng SY, Lour WS, Tsai JH, Guo DF, Ku GW, Liu WC
Electrochemical and Solid State Letters, 12(2), H41, 2009 |
| 8 |
Illumination-Assisted Negative Bias Temperature Instability Degradation in Low Temperature Polycrystalline Silicon Thin-Film Transistors
Lin CS, Chen YC, Chang TC, Hsu WC, Chen SC, Li HW, Tu KJ, Jian FY, Chen TC
Electrochemical and Solid State Letters, 12(6), H229, 2009 |
| 9 |
Resist residues and transistor gate fabrication
Macintyre DS, Ignatova O, Thoms S, Thayne IG
Journal of Vacuum Science & Technology B, 27(6), 2597, 2009 |
| 10 |
Influence of overgrown micropipes in the active area of SIC Schottky diodes on long term reliability
Rupp R, Treu M, Turkes P, Beermann H, Scherg T, Preis H, Cerva H
Materials Science Forum, 483, 925, 2005 |
