| 1 |
Experimenting and modeling of catastrophic failure in electromigration-induced resistance degradation for deep submicron dual-damascene copper interconnects
Adhikari A, Roy A
Solid-State Electronics, 148, 7, 2018 |
| 2 |
Effect of bath additives on copper electrodeposited directly on diffusion barrier for integrated silicon devices
Im B, Kim S
Thin Solid Films, 546, 263, 2013 |
| 3 |
Mechanistic study on interlayer dielectric breakdown in integrated circuits
Wang P
Materials Chemistry and Physics, 128(3), 323, 2011 |
| 4 |
Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization
Perng DC, Yeh JB, Hsu KC
Applied Surface Science, 256(3), 688, 2009 |
| 5 |
Phosphorous doped Ru film for advanced Cu diffusion barriers
Perng DC, Yeh JB, Hsu KC
Applied Surface Science, 254(19), 6059, 2008 |
| 6 |
Improved shape evolution of copper interconnects prepared by jet-stream etching
Yeh TK, Tsai MH, Wang MY, Weng CK
Journal of Applied Electrochemistry, 38(11), 1495, 2008 |
| 7 |
Mechanism of via failure in copper/organosilicate glass interconnects induced by oxidation
Min WS, Kim DJ, Pyo SG, Park SJ, Choi JT, Kim S
Thin Solid Films, 515(7-8), 3875, 2007 |
| 8 |
Superior thermal stability of Ta/TaN bi-layer structure for copper metallization
Xie Q, Qu XP, Tan JJ, Jiang YL, Zhou M, Chen T, Ru GP
Applied Surface Science, 253(3), 1666, 2006 |
| 9 |
The properties of Ru on Ta-based barriers
Tan JJ, Qu XP, Xie Q, Zhou Y, Ru GP
Thin Solid Films, 504(1-2), 231, 2006 |
| 10 |
Annealing textures of thin films and copper interconnects
Lee DN
Materials Science Forum, 475-479, 1, 2005 |
