| 1 |
ITO/AlN rod-based hybrid electrodes: effect of buffer layers in AlN rods on performance of 365-nm light-emitting diodes
Kim KH, Lee TH, Son KR, Kim TG
Applied Surface Science, 477, 172, 2019 |
| 2 |
Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device
Zhang L, Xu HY, Wang ZQ, Yu H, Ma JG, Liu YC
Applied Surface Science, 360, 338, 2016 |
| 3 |
Complementary resistive switching in BaTiO3/NiO bilayer with opposite switching polarities
Li S, Wei XH, Lei Y, Yuan XC, Zeng HZ
Applied Surface Science, 389, 977, 2016 |
| 4 |
Memory programming of TiO2-x films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching
Bousoulasa P, Giannopoulos J, Giannakopoulos K, Dimitrakis P, Tsoukalas D
Applied Surface Science, 332, 55, 2015 |
| 5 |
A Universal Method of Producing Transparent Electrodes Using Wide-Bandgap Materials
Kim HD, An HM, Kim KH, Kim SJ, Kim CS, Cho J, Schubert EF, Kim TG
Advanced Functional Materials, 24(11), 1575, 2014 |
| 6 |
Influence of Ti top electrode thickness on the resistive switching properties of forming free and self-rectified TiO2 (-) (x) thin films
Bousoulas P, Michelakaki I, Tsoukalas D
Thin Solid Films, 571, 23, 2014 |
