검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Close-spaced vapor transport reactor for III-V growth using HCI as the transport agent Funch CJ, Greenaway AL, Boucher JW, Weiss R, Welsh A, Aloni S, Boettcher SW Journal of Crystal Growth, 506, 147, 2019 |
| 2 |
Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition Liu XF, Yan GG, Liu B, Shen ZW, Wen ZX, Chen J, Zhao WS, Wang L, Zhang F, Sun GS, Zeng YP Journal of Crystal Growth, 504, 7, 2018 |
| 3 |
Growth of thick and high crystalline quality InGaN layers on GaN (000(1)over-bar) substrate using tri-halide vapor phase epitaxy Hirasaki T, Eriksson M, Thieu QT, Karlsson F, Murakami H, Kumagai Y, Monemar B, Holtz PO, Koukitu A Journal of Crystal Growth, 456, 145, 2016 |
| 4 |
Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates Leone S, Henry A, Janzen E, Nishizawa S Journal of Crystal Growth, 362, 170, 2013 |
| 5 |
Enhanced growth and photoluminescence properties of SnxNy (x > y) nanowires grown by halide chemical vapor deposition Zervos M, Othonos A Journal of Crystal Growth, 316(1), 25, 2011 |
| 6 |
Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC Krishnan B, Kotamraju S, Thirumalai RVKG, Koshka Y Journal of Crystal Growth, 321(1), 8, 2011 |
| 7 |
Low-temperature homoepitaxial growth of 4H-SiC with CH3Cl and SiCl4 precursors Kotamraju S, Krishnan B, Melnychuk G, Koshka Y Journal of Crystal Growth, 312(5), 645, 2010 |
| 8 |
Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC Das H, Melnychuk G, Koshka Y Journal of Crystal Growth, 312(12-13), 1912, 2010 |
| 9 |
Fabrication of a freestanding GaN layer by direct growth on a ZnO template using hydride vapor phase epitaxy Kim SY, Lee HJ, Park SH, Lee W, Jung MN, Fujii K, Goto T, Sekiguchi T, Chang JH, Kil G, Yao T Journal of Crystal Growth, 312(14), 2150, 2010 |
| 10 |
Epitaxial growth of 4H-SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation Koshka Y, Lin HD, Melnychuk G, Wood C Journal of Crystal Growth, 294(2), 260, 2006 |