검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
High temperature deep level transient spectroscopy investigations of n-type 4H-SiC epitaxial layers Schoner A, Fujihira K, Kimoto T, Matsunami H Materials Science Forum, 433-4, 387, 2002 |
| 2 |
Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments Ellison A, Zhang J, Magnusson W, Henry A, Wahab Q, Bergman JP, Hemmingsson C, Son NT, Janzen E Materials Science Forum, 338-3, 131, 2000 |
| 3 |
Morphology control for growth of thick epitaxial 4H SiC layers Zhang J, Ellison A, Janzen E Materials Science Forum, 338-3, 137, 2000 |