| 1 |
In situ measurement of plasma charging on SiO2 hole bottoms and reduction by negative charge injection during etching
Ohmori T, Makabe T
Applied Surface Science, 254(12), 3696, 2008 |
| 2 |
Fundamentals and applications of ion-ion plasmas
Economou DJ
Applied Surface Science, 253(16), 6672, 2007 |
| 3 |
Study of plasma charging-induced white pixel defect increase in CMOS active pixel sensor
Tokashiki K, Bai K, Baek K, Kim Y, Min G, Kang C, Cho H, Moon J
Thin Solid Films, 515(12), 4864, 2007 |
| 4 |
Threshold voltage shift of submicron p-channel MOSFET due to Si surface damage from plasma etching process
Kim GH, Kang YR, Kim WJ, Kim SY, Kim CI
Thin Solid Films, 515(12), 4892, 2007 |
| 5 |
Modeling of a plasma etcher for charging free processing of nanoscale structures
Radmilovic-Radjenovic M, Stojkovic A, Strinic A, Stojanovic V, Nikitovic Z, Malovic GN, Petrovic ZL
Materials Science Forum, 518, 57, 2006 |
| 6 |
Diagnostic studies of aluminum etching in an inductively coupled plasma system: Determination of electron temperatures and connections to plasma-induced damage
Malyshev MV, Donnelly VM, Downey SW, Colonell JI, Layadi N
Journal of Vacuum Science & Technology A, 18(3), 849, 2000 |
| 7 |
Process damage assessment of a low energy inductively coupled plasma-based neutral source
Tang XM, Wang Q, Manos DM
Journal of Vacuum Science & Technology B, 18(3), 1262, 2000 |
| 8 |
Absolute intensities of the vacuum ultraviolet spectra in a metal-etch plasma processing discharge
Woodworth JR, Blain MG, Jarecki RL, Hamilton TW, Aragon BP
Journal of Vacuum Science & Technology A, 17(6), 3209, 1999 |
| 9 |
Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing
Trabzon L, Awadelkarim OO, Werking J
Journal of Vacuum Science & Technology B, 17(5), 2216, 1999 |
| 10 |
Power dependence of gate oxide damage from electron shading effect in high-density-plasma metal etching
Hashimoto K, Shimpuku F, Hasegawa A, Hikosaka Y, Nakamura M
Thin Solid Films, 316(1-2), 1, 1998 |
