화학공학소재연구정보센터
검색결과 : 20건
No. Article
1 Performance analysis of microfluidic fuel cells with various inlet locations and multiple compartments
Tanveer M, Kim KY
Energy Conversion and Management, 166, 328, 2018
2 A study on five different channel shapes using a novel scheme for meshing and a structure of a multi-nozzle microchannel heat sink
Tran N, Chang YJ, Teng JT, Greif R
International Journal of Heat and Mass Transfer, 105, 429, 2017
3 Direct patterning of silver electrodes with 2.4 mu m channel length by piezoelectric inkjet printing
Ning HL, Tao RQ, Fang ZQ, Cai W, Chen JQ, Zhou YC, Zhu ZA, Zheng ZK, Yao RH, Xu M, Wang L, Lan LF, Peng JB
Journal of Colloid and Interface Science, 487, 68, 2017
4 Numerical study of the effect of relative humidity and stoichiometric flow ratio on PEM (proton exchange membrane) fuel cell performance with various channel lengths: An anode partial flooding modelling
Xing L, Cai Q, Xu CX, Liu CB, Scott K, Yan YS
Energy, 106, 631, 2016
5 On the extraction of the external drain and source resistors and effective channel length in Si-MOSFET
Joodaki M
Solid-State Electronics, 111, 1, 2015
6 Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation
Nicoletti T, dos Santos SD, Martino JA, Aoulaiche M, Veloso A, Jurczak M, Simoen E, Claeys C
Solid-State Electronics, 91, 53, 2014
7 Experimental investigation of the effect of channel length on performance and water accumulation in a PEMFC parallel flow field
Bachman J, Charvet M, Santamaria A, Tang HY, Park JW, Walker R
International Journal of Hydrogen Energy, 37(22), 17172, 2012
8 Effect of channel dopant uniformity on MOSFET threshold voltage variability
Terada K, Sanai K, Tsuji K, Tsunomura T, Nishida A, Mogami T
Solid-State Electronics, 69, 62, 2012
9 An extended drain current conductance extraction method and its application to DRAM support and array devices
Joodaki M
Solid-State Electronics, 53(9), 1020, 2009
10 Method of extracting effective channel length for nano-scale n-MOSFETs
Choi HW, Lee NH, Kang HS, Kang BK
Solid-State Electronics, 53(10), 1076, 2009