검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations Nazir A, Eyben P, Clarysse T, Hellings G, Schulze A, Mody J, De Meyer K, Bender H, Vandervorst W Solid-State Electronics, 74, 38, 2012 |
| 2 |
Dopant profile measurements in ion implanted 6H-SiC by scanning capacitance microscopy Giannazzo F, Calcagno L, Roccaforte F, Musumeci P, La Via F, Raineri V Applied Surface Science, 184(1-4), 183, 2001 |