검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
Electrical properties of Si-SiO2 interface traps and evolution with oxide thickness in MOSFET's with oxides from 2.3 to 1.2 nm thick Bauza D Solid-State Electronics, 47(10), 1677, 2003 |
| No. | Article |
|---|---|
| 1 |
Electrical properties of Si-SiO2 interface traps and evolution with oxide thickness in MOSFET's with oxides from 2.3 to 1.2 nm thick Bauza D Solid-State Electronics, 47(10), 1677, 2003 |