검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
2-inch 4H-SIC homoepitaxial layer grown on on-axis C-face substrate by CVD method Kojima K, Okumura H, Kuroda S, Arai D, Ohi A, Akinaga H Materials Science Forum, 483, 93, 2005 |
| 2 |
4H-SiC lateral RESURF MOSFETs on carbon-face substrates Okamoto M, Suzuki S, Kato M, Yatsuo T, Fukuda K Materials Science Forum, 483, 805, 2005 |
| 3 |
4H-SiC carbon-face epitaxial layers grown by low-pressure hot-wall chemical vapor deposition Kojima K, Takahashi T, Ishida Y, Kuroda S, Okumura H, Arai K Materials Science Forum, 457-460, 209, 2004 |
| 4 |
4H-SiC MOSFETs on C(000(-),1) face with inversion channel mobility of 127cm(2)/Vs Fukuda K, Kato M, Senzaki J, Kojima K, Suzuki T Materials Science Forum, 457-460, 1417, 2004 |
| 5 |
High inversion channel mobility of MOSFET fabricated on 4H-SiC C(000(1)over-bar) face using H-2 post-oxidation annealing Fukuda K, Senzaki J, Kojima K, Suzuki T Materials Science Forum, 433-4, 567, 2002 |