검색결과 : 1건
No. | Article |
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1 |
Microscopic structure and electrical activity of 4H-SIC/SiO2 interface defects : an EPR study of oxidized porous SiC von Bardeleben HJ, Cantin JL, Shishkin Y, Devaty RP, Choyke WJ Materials Science Forum, 457-460, 1457, 2004 |