| 1 |
Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells
Linares PG, Antolin E, Marti A
Solar Energy Materials and Solar Cells, 194, 54, 2019 |
| 2 |
High frequency characteristic of a monolithic 500 degrees C OpAmp-RC integrator in SiC bipolar IC technology
Tian Y, Zetterling CM
Solid-State Electronics, 135, 65, 2017 |
| 3 |
Transient collector modulation of 4H-SiC BJTs during switch-on process
Yuferev VS, Levinshtein ME, Ivanov PA, Zhang JQ, Palmour JW
Solid-State Electronics, 123, 130, 2016 |
| 4 |
Design and implementation of an energy efficient power conditioner for fuel cell generation system
Chandrasekar V, Chacko RV, Lakaparampil ZV
International Journal of Hydrogen Energy, 36(22), 15009, 2011 |
| 5 |
Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part I - Static analysis
Russo S, La Spina L, d'Alessandro V, Rinaldi N, Nanver LK
Solid-State Electronics, 54(8), 745, 2010 |
| 6 |
Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part II - Dynamic analysis
Russo S, La Spina L, d'Alessandro V, Rinaldi N, Nanver LK
Solid-State Electronics, 54(8), 754, 2010 |
| 7 |
Investigation of deep level defects in copper irradiated bipolar junction transistor
Madhu KV, Kumar R, Ravindra M, Damle R
Solid-State Electronics, 52(8), 1237, 2008 |
| 8 |
Analytical model for base transit time of a bipolar transistor with Gaussian-doped base
Hassan MMS, Rahman T, Khan MZR
Solid-State Electronics, 50(3), 327, 2006 |
| 9 |
Dependence of low frequency noise in SiGe heterojunction bipolar transistors on the dimensional and structural features of extrinsic regions
Ul Hoque MM, Celik-Butler Z, Martin S, Knorr C, Bulucea C
Solid-State Electronics, 50(7-8), 1430, 2006 |
| 10 |
Current gain of 4H-SiC bipolar transistors including the effect of interface states
Domeij M, Danielsson E, Lee HS, Zetterling CM, Ostling M
Materials Science Forum, 483, 889, 2005 |
