검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
The role of the ion implanted emitter state on 6H-SiC power diodes behavior. A statistical study Lazar M, Cardinali G, Raynaud C, Poggi A, Planson D, Nipoti R, Chante JP Materials Science Forum, 457-460, 1025, 2004 |
| 2 |
Design, fabrication and characterization of 5 kV 4H-SiC p(+)n planar bipolar diodes protected by junction termination extension Raynaud C, Lazar M, Planson D, Chante JP, Sassi Z Materials Science Forum, 457-460, 1033, 2004 |
| 3 |
Study of 4H-SiC high-voltage bipolar diodes under reverse bias using electrical and OBIC characterization Isoird K, Lazar M, Locatelli ML, Raynaud C, Planson D, Chante JP Materials Science Forum, 389-3, 1289, 2002 |
| 4 |
OBIC measurements of 1.3kV 6H-SiC bipolar diodes protected by junction termination extension Wang SR, Raynaud C, Planson D, Lazar M, Chante JP Materials Science Forum, 433-4, 863, 2002 |
| 5 |
Study of 6H-SiC high voltage bipolar diodes under reverse biases Isoird K, Lazar M, Ottaviani L, Locatelli ML, Raynaud C, Planson D, Chante JP Applied Surface Science, 184(1-4), 477, 2001 |