검색결과 : 28건
| No. | Article |
|---|---|
| 1 |
Near-zero IR transmission of VO2 thin films deposited on Si substrate Zhang CZ, Koughia C, Li YS, Cui XY, Ye F, Shiri S, Sanayei M, Wen SJ, Yang QQ, Kasap S Applied Surface Science, 440, 415, 2018 |
| 2 |
Molecular dynamics simulation of polymer-coupled ion transport in the crystalline polymer electrolyte poly(ethylene oxide)(3):NaI Cheerla R, Krishnan M Polymer, 155, 136, 2018 |
| 3 |
Simultaneous photoelectrocatalytic aromatic organic pollutants oxidation for hydrogen production promotion with a self-biasing photoelectrochemical cell Wu ZY, Zhou ZY, Zhang YJ, Wang J, Shi HJ, Shen Q, Wei GF, Zhao GH Electrochimica Acta, 254, 140, 2017 |
| 4 |
Dielectric behavior of pure and silver nanoparticle dispersed liquid crystal compounds 7O.4 and 7O.6 under a biasing electric field Singh KN, Singh NM, Sharma HB, Alapati PR Molecular Crystals and Liquid Crystals, 646(1), 14, 2017 |
| 5 |
Exchange biasing and interlayer coupling in Co/Pt/Co/CoO multilayers with perpendicular anisotropy Zhang F, Liu ZY, Wen FS, Li L, Wang PW, Li XC, Ming XB Thin Solid Films, 623, 102, 2017 |
| 6 |
Reverse bias degradation of metal wrap through silicon solar cells Barbato M, Barbato A, Meneghini M, Cester A, Mura G, Tonini D, Voltan A, Cellere G, Meneghesso G Solar Energy Materials and Solar Cells, 147, 288, 2016 |
| 7 |
Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond Doris B, DeSalvo B, Cheng K, Morin P, Vinet M Solid-State Electronics, 117, 37, 2016 |
| 8 |
A 60 GOPS/W,-1.8 V to 0.9 V body bias ULP cluster in 28 nm UTBB FD-SOI technology Rossi D, Pullini A, Loi I, Gautschi M, Gurkaynak FK, Bartolini A, Flatresse P, Benini L Solid-State Electronics, 117, 170, 2016 |
| 9 |
Low voltage logic circuits exploiting gate level dynamic body biasing in 28 nm UTBB FD-SOI Taco R, Levi I, Lanuzza M, Fish A Solid-State Electronics, 117, 185, 2016 |
| 10 |
UTBB FDSOI: Evolution and opportunities Monfray S, Skotnicki T Solid-State Electronics, 125, 63, 2016 |