| 1 |
Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors
Abliz A, Xu L, Wan D, Duan HM, Wang JL, Wang CL, Luo SJ, Liu CS
Applied Surface Science, 475, 565, 2019 |
| 2 |
Enhanced gate-bias stress stability of organic field-effect transistors by introducing a fluorinated polymer in semiconductor/insulator ternary blends
Jeong YJ, Yun DJ, Nam S, Jang J
Applied Surface Science, 481, 642, 2019 |
| 3 |
Bias-stress effects in diF-TES-ADT field-effect transistors
Kim CH
Solid-State Electronics, 153, 23, 2019 |
| 4 |
Overcoating BaTiO3 dielectrics with a fluorinated polymer to produce highly reliable organic field-effect transistors
Jeong YJ, Kim DH, Kang YM, An TEY
Thin Solid Films, 685, 40, 2019 |
| 5 |
Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT
Malik A, Sharma C, Laishram R, Bag RK, Rawal DS, Vinayak S, Sharma RK
Solid-State Electronics, 142, 8, 2018 |
| 6 |
Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors
Jung H, Choi S, Jang JT, Yoon J, Lee J, Lee Y, Rhee J, Ahn G, Yu HR, Kim DM, Choi SJ, Kim DH
Solid-State Electronics, 140, 80, 2018 |
| 7 |
Extraction method of trap densities for indium zinc oxide thin-film transistors processed by solution method
Qiang L, Liang XC, Pei YL, Yao RH, Wang G
Thin Solid Films, 649, 51, 2018 |
| 8 |
Cycle of charge carrier states with formation and extinction of a floating gate in an ambipolar tetracyanoquaterthienoquinoid-based field-effect transistor
Itoh T, Toyota T, Higuchi H, Matsushita MM, Suzuki K, Sugawara T
Chemical Physics Letters, 671, 71, 2017 |
| 9 |
Bias stress effects in pentacene thin-film transistors with poly(methyl methacrylate) gate insulator
Kim DK, Lee H, Ham Y, Park J, Bae JH
Molecular Crystals and Liquid Crystals, 645(1), 36, 2017 |
| 10 |
Carrier trapping anisotropy in ambipolar SnO thin-film transistors
Luo H, Liang LY, Cao HT
Solid-State Electronics, 129, 88, 2017 |
