검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
An analysis of 175 MeV Nickel ion irradiation and annealing effects on silicon NPN rf power transistors Pushpa N, Praveen KC, Prakash APG, Gupta SK, Revannasiddaiah D Current Applied Physics, 13(1), 66, 2013 |
| 2 |
Influence of the minority carrier extracted by the base electrode on current gain of bipolar power transistors Zhang B, Chen WJ, Yi K, Li ZJ Solid-State Electronics, 50(3), 480, 2006 |
| 3 |
Influence of the extrinsic base on the base current kink in SiGeBJTs Sadovnikov A, Krakowski T, El-Diwany M Applied Surface Science, 224(1-4), 320, 2004 |
| 4 |
Base current gain of power (1800 V, 10 A) 4H-SiC npn-BJTs Ivanov PA, Levinshtein ME, Agarwal AK, Palmour JW, Ryu SH Materials Science Forum, 457-460, 1145, 2004 |
| 5 |
Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs Ivanov PA, Levinshtein ME, Rumyantsev SL, Ryu SH, Agarwal AK, Palmour JW Solid-State Electronics, 46(4), 567, 2002 |
| 6 |
Calculation of figures of merit of Si/Si1-x-yGexCy/Si HBTs and their optimization Biswas A, Basu PK Solid-State Electronics, 45(11), 1885, 2001 |