| 1 |
Solar blind avalanche photodetector based on the cation exchange growth of beta-Ga2O3/SnO2 bilayer heterostructure thin film
Mahmoud WE
Solar Energy Materials and Solar Cells, 152, 65, 2016 |
| 2 |
Avalanche breakdown in SOI MESFETs
Lepkowski W, Wilk SJ, Parsi A, Saraniti M, Ferry D, Thornton TJ
Solid-State Electronics, 91, 78, 2014 |
| 3 |
Electroded avalanche amorphous selenium (a-Se) photosensor
Bubon O, DeCrescenzo G, Zhao W, Ohkawa Y, Miyakawa K, Matsubara T, Kikuchi K, Tanioka K, Kubota M, Rowlands JA, Reznik A
Current Applied Physics, 12(3), 983, 2012 |
| 4 |
High-performance InGaP/GaAs superlattice-emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode
Tsai JH, Huang CH, Lour WS, Chao YT, Ou-Yang JJ, Jhou JC
Thin Solid Films, 521, 168, 2012 |
| 5 |
Investigation of the performance of strained-SiGe vertical IMOS-transistors
Dinh TV, Kraus R, Jungemann C
Solid-State Electronics, 54(9), 942, 2010 |
| 6 |
Using thin-Al films to boost the quantum efficiency of SiGe/Si multi-quantum well avalanche photodiodes
Hwang JD, Wang CL
Thin Solid Films, 516(10), 3328, 2008 |
| 7 |
A functional InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches
Tsai JH, Zhu KP, Chu YC, Chiu SY
Materials Chemistry and Physics, 87(2-3), 435, 2004 |
| 8 |
Avalanche multiplication and breakdown in 4H-SiC diodes
Ng BK, David JPR, Massey DJ, Tozer RC, Rees GJ, Yan F, Zhao JH, Weiner M
Materials Science Forum, 457-460, 1069, 2004 |
| 9 |
Impact-ionization-induced avalanche multiplication effect and Early effect in the selectively implanted collector n-p-n bipolar junction transistors
Su AYK, Gong J
Solid-State Electronics, 45(5), 761, 2001 |
| 10 |
Optoelectronic switch performance in double heterostructure-emitter bipolar transistor
Guo DF
Solid-State Electronics, 45(7), 1179, 2001 |
