검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Suppression of impurity interdiffusion in heteroepitaxy by inserting a low-temperature buffer layer in between the epilayer and the substrate Song JS, Seo SH, Oh MH, Chang JH, Cho MW, Yao T Journal of Crystal Growth, 261(1), 159, 2004 |
| 2 |
Growth of beta-FeSi2 on MnSi1.7 layers by reactive deposition epitaxy Kohira M, Souno Y, Matsuyama T, Tatsuoka H, Ohsugi IJ, Nishida IA, Kuwabara H Applied Surface Science, 216(1-4), 614, 2003 |
| 3 |
Formation of CaMgSi at Ca2Si/Mg2Si interface Hosono T, Kuramoto A, Matsuzawa Y, Momose Y, Maeda Y, Matsuyama T, Tatsuoka H, Fukuda Y, Hashimoto S, Kuwabara H Applied Surface Science, 216(1-4), 620, 2003 |