| 1 |
Effect Of O-2 gas partial pressure on structures and dielectric characteristics of rf sputtered ZrO2 thin films
Ma CY, Lapostolle F, Briois P, Zhang QY
Applied Surface Science, 253(21), 8718, 2007 |
| 2 |
Preparation and characterization of nanostructured ZrO2 thin films by glancing angle deposition
Wang SM, Xia GD, Fu XY, He HB, Shao JD, Fan ZX
Thin Solid Films, 515(7-8), 3352, 2007 |
| 3 |
Luminescence and structure of Er3+ doped Zirconia films deposited by electron beam evaporation
De Vicente FS, De Castro AC, De Souza MF, Li MS
Thin Solid Films, 418(2), 222, 2002 |
| 4 |
Elecctrochemical behaviour of titanium in fluoride-containing saliva
de Mele MFL, Cortizo MC
Journal of Applied Electrochemistry, 30(1), 95, 2000 |
| 5 |
Electrochemical behaviour of zirconium and the anodic oxide film in aqueous solutions containing chloride ions
Mogoda AS
Thin Solid Films, 357(2), 202, 1999 |
| 6 |
Influence of substrate temperature and target composition on the properties of yttria-stabilized zirconia thin films grown by rf reactive magnetron sputtering
Boulouz M, Boulouz A, Giani A, Boyer A
Thin Solid Films, 323(1-2), 85, 1998 |
| 7 |
Oxygen Permeation Through Thin Zirconia/Yttria Membranes Prepared by Evd
Han JH, Xomeritakis G, Lin YS
Solid State Ionics, 93(3-4), 263, 1997 |
| 8 |
Effects of Ion-Beam-Assisted Deposition on the Growth of Zirconia Films
Koch T, Ziemann P
Thin Solid Films, 303(1-2), 122, 1997 |
| 9 |
Effects of Chloride-Ion and Applied Current-Density on the Stress Generation During Anodic-Oxidation of Tungsten in 0.1 M H2SO4 Solution
Kim JD, Pyun SI, Oriani RA
Electrochimica Acta, 41(1), 57, 1996 |
| 10 |
Effect of Halide-Ions on the Formation and Dissolution Behavior of Zirconium-Oxide
Elmahdy GA, Mahmoud SS, Eldahan HA
Thin Solid Films, 286(1-2), 289, 1996 |
