검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Single-cell transcriptional diversity is a hallmark of developmental potential Gulati GS, Sikandar SS, Wesche DJ, Manjunath A, Bharadwaj A, Berger MJ, Ilagan F, Kuo AH, Hsieh RW, Cai S, Zabala M, Scheeren FA, Lobo NA, Qian DL, Yu FQB, Dirbas FM, Clarke MF, Newman AM Science, 367(6476), 405, 2020 |
| 2 |
2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics Rafi JM, Campabadal F, Ohyama H, Takakura K, Tsunoda I, Zabala M, Beldarrain O, Gonzalez MB, Garcia H, Castan H, Gomez A, Duenas S Solid-State Electronics, 79, 65, 2013 |
| 3 |
Impact of electrical stress on the electrical characteristics of 2 MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics Rafi JM, Gonzalez MB, Takakura K, Tsunoda I, Yoneoka M, Beldarrain O, Zabala M, Campabadal F Solid-State Electronics, 89, 198, 2013 |
| 4 |
2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon Garcia H, Castan H, Duenas S, Bailon L, Campabadal F, Rafi JM, Zabala M, Beldarrain O, Ohyama H, Takakura K, Tsunoda I Thin Solid Films, 534, 482, 2013 |
| 5 |
Fabrication of PPF Electrodes by a Rapid Thermal Process del Campo FJ, Godignon P, Aldous L, Pausas E, Sarrion M, Zabala M, Prehn R, Compton RG Journal of the Electrochemical Society, 158(1), H63, 2011 |
| 6 |
Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon Rafi JM, Zabala M, Beldarrain O, Campabadal F Journal of the Electrochemical Society, 158(5), G108, 2011 |
| 7 |
Deposited Thin SiO2 for Gate Oxide on n-Type and p-Type GaN Placidi M, Constant A, Fontsere A, Pausas E, Cortes I, Cordier Y, Mestres N, Perez R, Zabala M, Millan J, Godignon P, Perez-Tomas A Journal of the Electrochemical Society, 157(11), H1008, 2010 |