검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
3D NAND flash memory with laterally-recessed channel (LRC) and connection gate architecture Yun JG, Lee JD, Park BG Solid-State Electronics, 55(1), 37, 2011 |
| 2 |
Stacked-nanowire device with virtual source/drain (SD-VSD) for 3D NAND flash memory application Yun JG, Cho S, Park BG Solid-State Electronics, 64(1), 42, 2011 |
| 3 |
Scaling behaviors of silicon-nitride layer for charge-trapping memory Li DH, Yun JG, Lee JH, Park BG Journal of Vacuum Science & Technology A, 28(4), 675, 2010 |
| 4 |
Effects of tunnel oxide process on SONOS flash memory characteristics Li DH, Park IH, Yun JG, Park BG Thin Solid Films, 518(9), 2509, 2010 |
| 5 |
Fabrication and characterization of fin SONOS flash memory with separated double-gate structure Yun JG, Kim Y, Park IH, Lee JH, Kang S, Lee DH, Cho S, Kim DH, Lee GS, Sim WB, Son Y, Shin H, Lee JD, Park BG Solid-State Electronics, 52(10), 1498, 2008 |
| 6 |
The effect of triple capping layer (Ti/Ni/TiN) on the electrical and structural properties of nickel monosilicide Kim YJ, Choi CJ, Jung RJ, Oh SY, Yun JG, Lee WJ, Ji HH, Wang JS, Lee HD Journal of the Electrochemical Society, 153(1), G35, 2006 |
| 7 |
A new memory effect (MSD) in fully depleted SOI MOSFETs Bawedin M, Cristoloveanu S, Yun JG, Flandre D Solid-State Electronics, 49(9), 1547, 2005 |
| 8 |
Abnormal oxidation of NiSi formed on arsenic-doped substrate Yun JG, Ji HH, Oh SY, Bae MS, Lee HJ, Huang BF, Kim YG, Wang JS, Sung NG, Hu SB, Lee JG, Park SH, Lee HS, Ho WJ, Kim DB, Lee HD Electrochemical and Solid State Letters, 7(4), G83, 2004 |