| 1 |
Electrochemical Formation of a p-n Junction on Thin Film Silicon Deposited in Molten Salt
Zou XL, Ji L, Yang X, Lim T, Yu ET, Bard AJ
Journal of the American Chemical Society, 139(45), 16060, 2017 |
| 2 |
Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes
Ji L, Hsu HY, Li XH, Huang K, Zhang Y, Lee JC, Bard AJ, Yu ET
Nature Materials, 16(1), 127, 2017 |
| 3 |
Optimization of Lead-free Organic-inorganic Tin(II) Halide Perovskite Semiconductors by Scanning Electrochemical Microscopy
Hsu HY, Ji L, Du MS, Zhao J, Yu ET, Bard AJ
Electrochimica Acta, 220, 205, 2016 |
| 4 |
A Liquid Junction Photoelectrochemical Solar Cell Based on p-Type MeNH(3)Pbl(3) Perovskite with 1.05 V Open-Circuit Photovoltage
Hsu HY, Ji L, Ahn HS, Zhao J, Yu ET, Bard AJ
Journal of the American Chemical Society, 137(46), 14758, 2015 |
| 5 |
A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst
Ji L, McDaniel MD, Wang SJ, Posadas AB, Li XH, Huang HY, Lee JC, Demkov AA, Bard AJ, Ekerdt JG, Yu ET
Nature Nanotechnology, 10(1), 84, 2015 |
| 6 |
Integration of subwavelength optical nanostructures for improved antireflection performance of mechanically flexible GaAs solar cells fabricated by epitaxial lift-off
Li XH, Li PC, Ji L, Stender C, Tatavarti SR, Sablon K, Yu ET
Solar Energy Materials and Solar Cells, 143, 567, 2015 |
| 7 |
Structural and Room-Temperature Transport Properties of Zinc Blende and Wurtzite InAs Nanowires
Dayeh SA, Susac DA, Kavanagh KL, Yu ET, Wang DL
Advanced Functional Materials, 19(13), 2102, 2009 |
| 8 |
Analysis of local carrier modulation in InAs semiconductor nanowire transistors
Zhou X, Dayeh SA, Wang D, Yu ET
Journal of Vacuum Science & Technology B, 25(4), 1427, 2007 |
| 9 |
Transport properties of InAs nanowire field effect transistors: The effects of surface states
Dayeh SA, Soci C, Yu PKL, Yu ET, Wang D
Journal of Vacuum Science & Technology B, 25(4), 1432, 2007 |
| 10 |
Dependence of local electronic structure in p-type GaN on crystal polarity and presence of inversion domain boundaries
Zhou X, Yu ET, Green DS, Speck JS
Journal of Vacuum Science & Technology B, 24(1), 245, 2006 |
