| 1 |
Roles of hydrogen on the composition and bonding of atoms in hydrogenated aluminum nitride films prepared by RF reactive sputtering
Kang YS, Yong YJ, Lee PS, Lee JY
Journal of the Electrochemical Society, 149(1), G51, 2002 |
| 2 |
Fabrication of c-axis oriented ZnO/AlN thin films prepared by radio frequency reactive sputtering and development of ZnO/AlN layered structure surface acoustic wave devices
Yong YJ, Kang YS, Lee PS, Lee JY
Journal of Vacuum Science & Technology B, 20(1), 42, 2002 |
| 3 |
A Study of the Growth-Mechanism of Ni2Si Phase Formed at Ni/A-Si Interface
Kim HS, Yong YJ, Lee JY, Lee KY
Journal of Materials Science Letters, 16(7), 560, 1997 |
| 4 |
Characteristics of Hydrogenated Aluminum Nitride Films Prepared by Radio-Frequency Reactive Sputtering and Their Application to Surface-Acoustic-Wave Devices
Yong YJ, Lee JY
Journal of Vacuum Science & Technology A, 15(2), 390, 1997 |
| 5 |
Influence of Sputtering Pressure on the Microstructure Evolution of AIN Thin-Films Prepared by Reactive Sputtering
Lee HC, Kim GH, Hong SK, Lee KY, Yong YJ, Chun CH, Lee JY
Thin Solid Films, 261(1-2), 148, 1995 |
| 6 |
Effect of Hydrogen Addition on the Preferred Orientation of AlN Films Prepared by Reactive Sputtering
Lee HC, Lee KY, Yong YJ, Lee JY, Kim GH
Thin Solid Films, 271(1-2), 50, 1995 |
