검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Deep level effects on the characteristics of Al0.25Ga0.75As/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source MBE Yoon SF, Yip KH, Zheng HQ Journal of Crystal Growth, 233(1-2), 150, 2001 |
| 2 |
Effect of deep levels on the characteristics of InGa1-xP/In0.20Ca0.80As/GaAs high-electron mobility transistor grown by solid-source MBE Yoon SF, Yip KH, Zheng HQ, Gay BP Journal of Crystal Growth, 217(1-2), 33, 2000 |
| 3 |
Deep level effects on the characteristics of Al0.24Ga0.76As/In0.20Ga0.80As/GaAs and In0.48Ga0.52P/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source molecular beam epitaxy Yoon SF, Yip KH, Zheng HQ, Gay BP Solid-State Electronics, 44(11), 1909, 2000 |