검색결과 : 2건
No. | Article |
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1 |
On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide Yazdanfar M, Pedersen H, Sukkaew P, Ivanov IG, Danielsson O, Kordina O, Janzen E Journal of Crystal Growth, 390, 24, 2014 |
2 |
Process stability and morphology optimization of very thick 4H-SiC epitaxial layers grown by chloride-based CVD Yazdanfar M, Stenberg P, Booker ID, Ivanov IG, Kordina O, Pedersen H, Janzen E Journal of Crystal Growth, 380, 55, 2013 |