화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide
Yazdanfar M, Pedersen H, Sukkaew P, Ivanov IG, Danielsson O, Kordina O, Janzen E
Journal of Crystal Growth, 390, 24, 2014
2 Process stability and morphology optimization of very thick 4H-SiC epitaxial layers grown by chloride-based CVD
Yazdanfar M, Stenberg P, Booker ID, Ivanov IG, Kordina O, Pedersen H, Janzen E
Journal of Crystal Growth, 380, 55, 2013