검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers Yarlagadda B, Rodriguez A, Li P, Velampati R, Ocampo JF, Ayers JE, Jain FC Journal of Crystal Growth, 312(7), 886, 2010 |
| 2 |
Electrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices Li P, Rodriguez A, Yarlagadda B, Velampati R, Ayers JE, Jain FC Solid-State Electronics, 49(12), 2002, 2005 |