화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Growth of III-N/graphene heterostructures in single vapor phase epitaxial process
Lundin WV, Zavarin EE, Sakharov AV, Zakheim DA, Davydov VY, Smirnov AN, Eliseyev IA, Yagovkina MA, Brunkov PN, Lundina EY, Markov LK, Tsatsulnikov AF
Journal of Crystal Growth, 504, 1, 2018
2 Study of GaN doping with carbon from propane in a wide range of MOVPE conditions
Lundin WV, Sakharov AV, Zavarin EE, Kazantsev DY, Ber BY, Yagovkina MA, Brunkov PN, Tsatsulnikov AF
Journal of Crystal Growth, 449, 108, 2016
3 Peculiarities of strain relaxation in linearly graded InxGa1-xAs/GaAs(001) metamorphic buffer layers grown by molecular beam epitaxy
Sorokin SV, Klimko GV, Sedova IV, Sitnikova AA, Kirilenko DA, Baidakova MV, Yagovkina MA, Komissarova TA, Belyaev KG, Ivanov SV
Journal of Crystal Growth, 455, 83, 2016
4 Fast AlGaN growth in a whole composition range in planetary reactor
Lundin WV, Nikolaev AE, Rozhavskaya MM, Zavarin EE, Sakharov AV, Troshkov SI, Yagovkina MA, Tsatsulnikov AF
Journal of Crystal Growth, 370, 7, 2013
5 High growth rate MOVPE of Al(Ga)N in planetary reactor
Lundin WV, Nikolaev AE, Yagovkina MA, Brunkov PN, Rozhavskaya MM, Ber BY, Kazantsev DY, Tsatsulnikov AF, Lobanova AV, Talalaev RA
Journal of Crystal Growth, 352(1), 209, 2012
6 Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
Lundin WV, Nikolaev AE, Sakharov AV, Zavarin EE, Valkovskiy GA, Yagovkina MA, Usov SO, Kryzhanovskaya NV, Sizov VS, Brunkov PN, Zakgeim AL, Cherniakov AE, Cherkashin NA, Hytch MJ, Yakovlev EV, Bazarevskiy DS, Rozhavskaya MM, Tsatsulnikov AF
Journal of Crystal Growth, 315(1), 267, 2011
7 Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy
Mizerov AM, Jmerik VN, Yagovkina MA, Troshkov SI, Kop'ev PS, Ivanov SV
Journal of Crystal Growth, 323(1), 68, 2011