검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Sources of error in quantitative depth profiling of shallow doping distributions by secondary-ion-mass spectrometry in combination with oxygen flooding Wittmaack K, Corcoran SF Journal of Vacuum Science & Technology B, 16(1), 272, 1998 |
| 2 |
Secondary ion mass spectrometry and atomic force spectroscopy studies of surface roughening, erosion rate change and depth resolution in Si during 1 keV 60 degrees O-2(+) bombardment with oxygen flooding Jiang ZX, Alkemade PFA Journal of Vacuum Science & Technology B, 16(4), 1971, 1998 |
| 3 |
Sputtering rate change and surface roughening during oblique and normal incidence O-2(+) bombardment of silicon, with and without oxygen flooding Magee CW, Mount GR, Smith SP, Herner B, Gossmann HJ Journal of Vacuum Science & Technology B, 16(6), 3099, 1998 |
| 4 |
Surface-Roughness Formation in Si During Cs+ Ion-Bombardment Matsuura Y, Shichi H, Mitsui Y Journal of Vacuum Science & Technology A, 12(5), 2641, 1994 |