화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Passivation of AlN/GaN high electron mobility transistor using ozone treatment
Lo CF, Chang CY, Pearton SJ, Kravchenko II, Dabiran AM, Wowchak AM, Cui B, Chow PP, Ren F
Journal of Vacuum Science & Technology B, 28(1), 52, 2010
2 Semi-insulating, Fe-Doped buffer layers grown by molecular beam epitaxy
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yugova TG, Petrova EA, Dabiran AM, Wowchak AM, Osinsky AV, Chow PP, Pearton SJ, Shcherbatchev KD, Bublik VT
Journal of the Electrochemical Society, 154(9), H749, 2007
3 High current, common-base GaN/AlGaN heterojunction bipolar transistors
Cao XA, Dang GT, Zhang AP, Ren F, Van Hove JM, Klaassen JJ, Polley CJ, Wowchak AM, Chow PP, King DJ, Abernathy CR, Pearton SJ
Electrochemical and Solid State Letters, 3(3), 144, 2000
4 GaNPN junction issues and developments
Hickman R, Van Hove JM, Chow PP, Klaassen JJ, Wowchak AM, Polley CJ, King DJ, Ren F, Abernathy CR, Pearton SJ, Jung KB, Cho H, La Roche JR
Solid-State Electronics, 44(2), 377, 2000
5 Simulation of GaN/AlGaN heterojunction bipolar transistors: part I -npn structures
Cao XA, Van Hove JM, Klaassen JJ, Polley CJ, Wowchak AM, Chow PP, King DJ, Zhang AP, Dang G, Monier C, Pearton SJ, Ren F
Solid-State Electronics, 44(7), 1255, 2000
6 Simulation of GaN/AlGaN heterojunction bipolar transistors: part II -pnp structures
Cao XA, Van Hove JM, Klaassen JJ, Polley CJ, Wowchak AM, Chow PP, King DJ, Zhang AP, Dang G, Monier C, Pearton SJ, Ren F
Solid-State Electronics, 44(7), 1261, 2000
7 Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence
Van Hove JM, Chow PP, Wowchak AM, Klaassen JJ, Hickman R, Polley C
Journal of Vacuum Science & Technology B, 16(3), 1286, 1998