검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Efficiency of layered double hydroxide nanoparticle-mediated delivery of siRNA is determined by nucleotide sequence Wong YY, Cooper HM, Zhang K, Chen M, Bartlett P, Xu ZP Journal of Colloid and Interface Science, 369, 453, 2012 |
| 2 |
Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy Wong YY, Chang EY, Wu YH, Hudait MK, Yang TH, Chang JR, Ku JT, Chou WC, Chen CY, Maa JS, Lin YC Thin Solid Films, 519(19), 6208, 2011 |
| 3 |
The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE Wong YY, Chang EY, Yang TH, Chang JR, Ku JT, Hudait MK, Chou WC, Chen M, Lin KL Journal of the Electrochemical Society, 157(7), H746, 2010 |
| 4 |
Effects of AlxGa1-xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition Lin KL, Chang EY, Hsiao YL, Huang WC, Luong TT, Wong YY, Li TK, Tweet D, Chiang CH Journal of Vacuum Science & Technology B, 28(3), 473, 2010 |
| 5 |
Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contents Wu YC, Chang EY, Lin YC, Kei CC, Hudait MK, Radosavljevic M, Wong YY, Chang CT, Huang JC, Tang SH Solid-State Electronics, 54(1), 37, 2010 |
| 6 |
The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy Wong YY, Chang EY, Yang TH, Chang JR, Chen YC, Ku JT, Lee CT, Chang CW Journal of Crystal Growth, 311(6), 1487, 2009 |
| 7 |
Growth of free-standing GaN layer on Si(111) substrate Yang TH, Ku JT, Chang JR, Shen SG, Chen YC, Wong YY, Chou WC, Chen CY, Chang CY Journal of Crystal Growth, 311(7), 1997, 2009 |
| 8 |
Near infrared absorptions of CH4/He plasma: the Phillips band system of C-2 Chan MC, Yeung SH, Wong YY, Li YF, Chan WM, Yim KH Chemical Physics Letters, 390(4-6), 340, 2004 |