검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Refiners address FCC operations Klinghoffer A, Makhania M, Clark T, Alalloush S, Federspiel M, Romero R, Talmadge M, Bryden K, Riley B, Wojtowicz M Oil & Gas Journal, 117(11), 44, 2019 |
| 2 |
Synthesis, characterization, and gas permeation properties of thermally rearranged poly(hydroxyimide)s filled with mesoporous MCM-41 silica Wolinska-Grabczyk A, Wojtowicz M, Jankowski A, Grabiec E, Kubica P, Musiol M, Sobota M Polymer, 158, 32, 2018 |
| 3 |
Gas. and water vapor transport properties of mixed matrix membranes containing 13X zeolite Wolinska-Grabczyk A, Kubica P, Jankowski A, Wojtowicz M, Kansy J, Wojtyniak M Journal of Membrane Science, 526, 334, 2017 |
| 4 |
Strain relaxation and surface roughness of InxAl1-xAs graded buffer layers grown on InP for 6.05 angstrom applications Noori AM, Sandhu RS, Hayashi SL, Meserole ED, Hardev V, Cavus A, Lange M, Monier C, Hsing R, Sawdai D, Wojtowicz M, Block TR, Gutierrez-Aitken A, Goorsky MS Journal of Vacuum Science & Technology B, 22(5), 2303, 2004 |
| 5 |
X-ray diffraction imaging of GaN-based heterostructures on SiC Poust B, Feichtinger P, Sandhu R, Smorchkova I, Heying B, Block T, Wojtowicz M, Goorsky M Materials Science Forum, 457-460, 1601, 2004 |
| 6 |
Interfacial roughness and carrier scattering due to misfit dislocations in In0.52Al0.48As/In0.75Ga0.25As/InP structures Naidenkova M, Goorsky MS, Sandhu R, Hsing R, Wojtowicz M, Chin TP, Block TR, Streit DC Journal of Vacuum Science & Technology B, 20(3), 1205, 2002 |
| 7 |
High performance InP high electron mobility transistors by valved phosphorus cracker Chin TP, Chen YC, Barsky M, Wojtowicz M, Grundbacher R, Lai R, Streit DC, Block TR Journal of Vacuum Science & Technology B, 18(3), 1642, 2000 |
| 8 |
Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers Goorsky MS, Sandhu R, Hsing R, Naidenkova M, Wojtowicz M, Chin TP, Block TR, Streit DC Journal of Vacuum Science & Technology B, 18(3), 1658, 2000 |
| 9 |
Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs Sandhu RS, Bhasin G, Moore CD, U'Ren GD, Goorsky MS, Chin TP, Wojtowicz M, Block TR, Streit DC Journal of Vacuum Science & Technology B, 17(3), 1163, 1999 |
| 10 |
Multiwafer molecular beam epitaxy for high volume production of GaAs/AlGaAs heterojunction bipolar transistor wafers Block TR, Wojtowicz M, Han AC, Olson SR, Oki AK, Streit DC Journal of Vacuum Science & Technology B, 16(3), 1475, 1998 |