화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics
Knoll L, Richter S, Nichau A, Trellenkamp S, Schafer A, Wirths S, Blaeser S, Buca D, Bourdelle KK, Zhao QT, Mantl S
Solid-State Electronics, 98, 32, 2014
2 SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications
Wirths S, Buca D, Ikonic Z, Harrison P, Tiedemann AT, Hollander B, Stoica T, Mussler G, Breuer U, Hartmann JM, Grutzmacher D, Mantl S
Thin Solid Films, 557, 183, 2014
3 Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
Oehme M, Buca D, Kostecki K, Wirths S, Hollander B, Kasper E, Schulze J
Journal of Crystal Growth, 384, 71, 2013
4 Low temperature RPCVD epitaxial growth of Si1-xGex using Si2H6 and Ge2H6
Wirths S, Buca D, Tiedemann AT, Bernardy P, Hollander B, Stoica T, Mussler G, Breuer U, Mantl S
Solid-State Electronics, 83, 2, 2013