검색결과 : 11건
No. | Article |
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1 |
Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100% Schmidt J, Eilert M, Peters S, Wietler TF Applied Surface Science, 421, 772, 2017 |
2 |
Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates Schmidt J, Tetzlaff D, Bugiel E, Wietler TF Journal of Crystal Growth, 457, 171, 2017 |
3 |
Growth of epitaxially stabilized, non-cubic Gd2O3 on silicon(111) substrates Moellers M, Margenfeld C, Wietler TF, Osten HJ Journal of Crystal Growth, 480, 141, 2017 |
4 |
A simple method for pinhole detection in carrier selective POLO-junctions for high efficiency silicon solar cells Tetzlaff' D, Krugener J, Larionova Y, Reiter S, Turcu M, Haase F, Brendel R, Peibst R, Hohne U, Kahler JD, Wietler TF Solar Energy Materials and Solar Cells, 173, 106, 2017 |
5 |
In situ observation of low temperature growth of Ge on Si(111) by reflection high energy electron diffraction Grimm A, Fissel A, Bugiel E, Wietler TF Applied Surface Science, 370, 40, 2016 |
6 |
Surfactant-mediated epitaxy of silicon germanium films on silicon (001) substrates Wietler TF, Schmidt J, Tetzlaff D, Bugiel E Thin Solid Films, 557, 27, 2014 |
7 |
Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy Tetzlaff D, Wietler TF, Bugiel E, Osten HJ Journal of Crystal Growth, 378, 254, 2013 |
8 |
Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(001) substrates Wietler TF, Laha A, Bugiel E, Czernohorsky M, Dargis R, Fissel A, Osten HJ Solid-State Electronics, 53(8), 833, 2009 |
9 |
Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon Wietler TF, Bugiel E, Hofmann KR Applied Surface Science, 255(3), 778, 2008 |
10 |
Relaxed germanium films on silicon (110) Wietler TF, Bugiel E, Hofmann KR Thin Solid Films, 517(1), 272, 2008 |