화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100%
Schmidt J, Eilert M, Peters S, Wietler TF
Applied Surface Science, 421, 772, 2017
2 Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates
Schmidt J, Tetzlaff D, Bugiel E, Wietler TF
Journal of Crystal Growth, 457, 171, 2017
3 Growth of epitaxially stabilized, non-cubic Gd2O3 on silicon(111) substrates
Moellers M, Margenfeld C, Wietler TF, Osten HJ
Journal of Crystal Growth, 480, 141, 2017
4 A simple method for pinhole detection in carrier selective POLO-junctions for high efficiency silicon solar cells
Tetzlaff' D, Krugener J, Larionova Y, Reiter S, Turcu M, Haase F, Brendel R, Peibst R, Hohne U, Kahler JD, Wietler TF
Solar Energy Materials and Solar Cells, 173, 106, 2017
5 In situ observation of low temperature growth of Ge on Si(111) by reflection high energy electron diffraction
Grimm A, Fissel A, Bugiel E, Wietler TF
Applied Surface Science, 370, 40, 2016
6 Surfactant-mediated epitaxy of silicon germanium films on silicon (001) substrates
Wietler TF, Schmidt J, Tetzlaff D, Bugiel E
Thin Solid Films, 557, 27, 2014
7 Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy
Tetzlaff D, Wietler TF, Bugiel E, Osten HJ
Journal of Crystal Growth, 378, 254, 2013
8 Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(001) substrates
Wietler TF, Laha A, Bugiel E, Czernohorsky M, Dargis R, Fissel A, Osten HJ
Solid-State Electronics, 53(8), 833, 2009
9 Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon
Wietler TF, Bugiel E, Hofmann KR
Applied Surface Science, 255(3), 778, 2008
10 Relaxed germanium films on silicon (110)
Wietler TF, Bugiel E, Hofmann KR
Thin Solid Films, 517(1), 272, 2008