화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Fabrication of Silicon on Diamond (SOD) substrates by either the Bonded and Etched-back SOI (BESOI) or the Smart-Cut (TM) technology
Widiez J, Rabarot M, Saada S, Mazellier JP, Dechamp J, Delaye V, Roussin JC, Andrieu F, Faynot O, Deleonibus S, Bergonzo P, Clavelier L
Solid-State Electronics, 54(2), 158, 2010
2 Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate, Double-Gate transistors
Barral V, Poiroux T, Vinet M, Widiez J, Previtali B, Grosgeorges P, Le Carval G, Barraud S, Autran JL, Munteanu D, Deleonibus S
Solid-State Electronics, 51(4), 537, 2007
3 Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique
Chaisantikulwat W, Mouis M, Ghibaudo G, Cristoloveanu S, Widiez J, Vinet M, Deleonibus S
Solid-State Electronics, 51(11-12), 1494, 2007
4 Multigate silicon MOSFETs for 45 nm node and beyond
Poiroux T, Vinet M, Faynot O, Widiez J, Lolivier J, Previtali B, Ernst T, Deleonibus S
Solid-State Electronics, 50(1), 18, 2006