화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 Single-layer graphene/titanium oxide cubic nanorods array/FTO heterojunction for sensitive ultraviolet light detection
Liang FX, Wang JZ, Wang Y, Lin Y, Liang L, Gao Y, Luo LB
Applied Surface Science, 426, 391, 2017
2 Temperature dependence of the lifetime of nonequilibrium charge carriers in GaP diodes under condition of recombination current domination
Krasnov VA, Shutov SV, Yerochin SY
Current Applied Physics, 15(4), 504, 2015
3 Hole injection and dielectric breakdown in 6H-SiC and 4H-SiC metal-oxide-semiconductor structures during substrate electron injection via Fowler-Nordheim tunneling
Samanta P, Mandal KC
Solid-State Electronics, 114, 60, 2015
4 Lattice and internal relaxation of ZnO thin film under in-plane strain
Qin GQ, Zhang GL, Li DC, Liu SM
Thin Solid Films, 519(1), 378, 2010
5 Growth and properties of YAlO film synthesized by RF magnetron sputtering
Matsunouchi K, Komatsu N, Kimura C, Aoki H, Sugino T
Applied Surface Science, 255(9), 5021, 2009
6 Stability of MgO(111) films grown on 6H-SiC(0001) by molecular beam epitaxy for two-step integration of functional oxides
Goodrich TL, Cai Z, Ziemer KS
Applied Surface Science, 254(10), 3191, 2008
7 Ab initio molecular orbital study on atmosphere-sensitive characteristics of the alternate supply OMVPE growth of ZnSe
Hayashi K, Omote N, Kanayama T
Solid State Ionics, 172(1-4), 165, 2004
8 Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface
Kimoto T, Hirao T, Fujihira K, Kosugi H, Danno K, Matsunami H
Applied Surface Science, 216(1-4), 497, 2003
9 Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology
Doolittle WA, Namkoong G, Carver AG, Brown AS
Solid-State Electronics, 47(12), 2143, 2003
10 Ag growth on 3C-SiC(001) c(2x2) C-terminated and c(4x2) Si-terminated surfaces
Rodriguez N, D'Angelo M, Aristov VY, Soukiassian P, Lescuras A, Croti C, Pedio M, Perfetti P
Materials Science Forum, 433-4, 587, 2002