화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Characterization of nanotransistors in a semiempirical model
Wulf U, Kucera J, Richter H, Wiatr M, Hontschel J
Thin Solid Films, 613, 6, 2016
2 Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks
Flachowsky S, Herrmann T, Hontschel J, Illgen R, Ong SY, Wiatr M
Solid-State Electronics, 88, 27, 2013
3 Advanced SOI CMOS transistor technology for high performance microprocessors
Horstmann M, Wiatr M, Wei A, Hoentschel J, Feudel T, Scheiper T, Stephan R, Gerhadt M, Krugel S, Raab M
Solid-State Electronics, 53(12), 1212, 2009
4 Impact of floating silicon film on small-signal parameters of fully depleted SOI-MOSFETs biased into accumulation
Wiatr M, Seegebrecht P
Solid-State Electronics, 49(5), 779, 2005
5 Intrinsic inversion charge in the mobility region of fully depleted SOI-MOSFETs
Wiatr M, Seegebrecht P
Solid-State Electronics, 46(12), 2089, 2002
6 Charge based modeling of the inner fringing capacitance of SOI-MOSFETs
Wiatr M, Seegebrecht P, Peters H
Solid-State Electronics, 45(4), 585, 2001