검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films Tadjer MJ, Wheeler VD, Downey BP, Robinson ZR, Meyer DJ, Eddy CR, Kub FJ Solid-State Electronics, 136, 30, 2017 |
| 2 |
Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth Lai KY, Paskova T, Wheeler VD, Grenko JA, Johnson MAL, Udwary K, Preble EA, Evans KR Journal of Crystal Growth, 312(7), 902, 2010 |
| 3 |
An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET's with experimental demonstration Park J, Ozbek AM, Ma L, Veety MT, Morgensen MP, Barlage DW, Wheeler VD, Johnson MAL Solid-State Electronics, 54(12), 1680, 2010 |