화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs
Enslin J, Mehnke F, Mogilatenko A, Bellmann K, Guttmann M, Kuhn C, Rass J, Lobo-Ploch N, Wernicke T, Weyers M, Kneissl M
Journal of Crystal Growth, 464, 185, 2017
2 Controlling the morphology transition between step-flow growth and step-bunching growth
Bellmann K, Pohl UW, Kuhn C, Wernicke T, Kneissl M
Journal of Crystal Growth, 478, 187, 2017
3 Analysis of crystal orientation in AIN layers grown on m-plane sapphire
Mogilatenko A, Kirmse H, Stellmach J, Frentrup M, Mehnke E, Wernicke T, Kneissl M, Weyers M
Journal of Crystal Growth, 400, 54, 2014
4 Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy
Stellmach J, Mehnke F, Frentrup M, Reich C, Schlegel J, Pristovsek M, Wernicke T, Kneissl M
Journal of Crystal Growth, 367, 42, 2013
5 MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire
Stellmach J, Frentrup M, Mehnke F, Pristovsek M, Wernicke T, Kneissl M
Journal of Crystal Growth, 355(1), 59, 2012
6 Topography of (20(2)over-bar1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
Ploch S, Wernicke T, Thalmair J, Lohr M, Pristovsek M, Zweck J, Weyers M, Kneissl M
Journal of Crystal Growth, 356, 70, 2012
7 Single phase {11(2)over-bar2} GaN on (10(1)over-bar0) sapphire grown by metal-organic vapor phase epitaxy
Ploch S, Park JB, Stellmach J, Schwaner T, Frentrup M, Niermann T, Wernicke T, Pristovsek M, Lehmann M, Kneissl M
Journal of Crystal Growth, 331(1), 25, 2011
8 Orientation control of GaN {1 1 (2)over-bar 2} and {1 0 (1)over-bar (3)over-bar} grown on (1 0 (1)over-bar 0) sapphire by metal-organic vapor phase epitaxy
Ploch S, Frentrup M, Wernicke T, Pristovsek M, Weyers M, Kneissl M
Journal of Crystal Growth, 312(15), 2171, 2010
9 Epitaxial lateral overgrowth on (2(1)over-bar(1)over-bar0) a-plane GaN with [0(1)over-bar11]-oriented stripes
Wernicke T, Zeimer U, Netzel C, Brunner F, Knauer A, Weyers M, Kneissl M
Journal of Crystal Growth, 311(10), 2895, 2009
10 Near band edge and defect emissions from epitaxial lateral overgrown a-plane GaN with different stripe orientations
Netzel C, Wernicke T, Zeimer U, Brunner F, Weyers M, Kneissl M
Journal of Crystal Growth, 310(1), 8, 2008