검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films Frischbier MV, Wardenga HF, Weidner M, Bierwagen O, Jia JJ, Shigesato Y, Klein A Thin Solid Films, 614, 62, 2016 |
| 2 |
Sputter-deposited polycrystalline tantalum-doped SnO2 layers Weidner M, Brotz J, Klein A Thin Solid Films, 555, 173, 2014 |
| 3 |
Effect of substrate roughness on the contact damage of thin brittle films on brittle substrates Weidner M, Borrero-Lopez O, Hoffman M, Bendavid A, Martin PJ Thin Solid Films, 518(18), 5242, 2010 |
| 4 |
Negative-U-centers in 4H-and 6H-SiC detected by spectral light excitation Weidner M, Pensl G, Nagasawa H, Schoner A, Ohshima T Materials Science Forum, 457-460, 485, 2004 |
| 5 |
Radiation-induced defects in 4H-and 6H-SiC epilayers studied by positron annihilation and deep-level transient spectroscopy Kawasuso A, Weidner M, Redmann F, Frank T, Krause-Rehberg R, Pensl G, Sperr P, Triftshauser W, Itoh H Materials Science Forum, 389-3, 489, 2002 |
| 6 |
Polytype-dependent vacancy annealing studied by positron annihilation Kawasuso A, Yoshikawa M, Maekawa M, Itoh H, Chiba T, Redmann F, Krause-Rehberg R, Weidner M, Frank T, Pensl G Materials Science Forum, 433-4, 477, 2002 |
| 7 |
Generation and annihilation of intrinsic-related defect centers in 4H/6H-SiC Frank T, Weidner M, Itoh H, Pensl G Materials Science Forum, 353-356, 439, 2001 |
| 8 |
Beryllium-related defect centers in 4H-SiC Krieger M, Laube M, Weidner M, Pensl G Materials Science Forum, 353-356, 467, 2001 |
| 9 |
Annealing process of defects in epitaxial SiC induced by He and electron irradiation: Positron annihilation study Kawasuso A, Redmann F, Krause-Rehberg R, Sperr P, Frank T, Weidner M, Pensl G, Itoh H Materials Science Forum, 353-356, 537, 2001 |
| 10 |
Controlled growth of bulk 15R-SiC single crystals by the modified Lely method Schulze N, Barrett D, Weidner M, Pensl G Materials Science Forum, 338-3, 111, 2000 |